Figure 1. Comparison between CG Silicon
22.1:  Invited Paper: CG Silicon Technology and System Integration for Mobile Applications
特邀報告：CG硅技術和系統集成的移動應用
Yoshitaka Yamamoto, Takuya Matsuo, Hideo Komiya
Sharp Corporation, Tenri, Nara, Japan
Abstract
摘要
The keywords for the ubiquitous network and high-information-content era are “information”  http://ukthesis.org/jsjwl/  and “audio-visual”. Novel devices to serve the needs of ubiquitous network require powerful input-output terminals with exceptional characteristics. In response to these requirements, we have developed high performance TFTs and “System LCD” using CG Silicon technology. In addition, we have demonstrated advanced system integration technology for mobile application such as sensors, the fusion of “audio” with “visual” and fine picture quality with good image control. For future, ubiquitous information tools, we are developing super-advanced poly-Si TFT devices capable of frequencies of over 1GHz on glass substrate.
無處不在的網絡和高信息含量時代的關鍵詞是“信息”和“視聽”。新型服務的需求，無處不在的網絡設備，需要強大的輸入輸出端子，而且需要具有卓越的特色。針對這些要求，我們已經開發出了高性能的TFT和使用CG硅技術的“系統液晶”。此外，我們已經證明了先進的系統集成技術，移動應用，如傳感器，融合“音頻”，“可視化”和精細的畫面質量，具有良好的形象控制。對于未來無處不在的信息化工具，我們正在開發超先進的多晶硅TFT器件，在玻璃基板上的頻率能夠超過1GHz。
1. Introduction
介紹
Our everyday life teaches us that we are experiencing a fundamental shift to an information-driven society. Starting with the internet, the information network – so called “ubiquitous network” – has expanded into all aspects of our life at an unprecedented speed and scale. Mobile phone is one of the leading examples of a ubiquitous information tool. We can use it as a telephone and, at the same time, as a terminal to connect to the information network and obtain data through an internet site or via e-mail. The capability, speed and quality of information exchange has received a substantial boost by the introduction of digital terrestrial broadcasting, which was launched in December 2003 in Japan and will be phased in several world capitals and major cities by 2006. 
我們的日常生活中教導我們，我們正在經歷一個根本性的轉變，以信息驅動社會。互聯網已經擴展到我們的生活的各個方面，信息網絡 - 所謂“無處不在的網絡” - 前所未有的速度和規模。手機是一個無處不在的信息工具的例子之一。我們可以使用它作為一個電話，在同一時間，作為終端來連接信息網絡以獲取數據，通過互聯網網站或通過e-mail。這是在2003年12月在日本推出，并將于2006年分階段在幾個世界首都和主要城市，進行地面數字廣播，信息交換能力，速度和質量將得到大幅提升。#p#分頁標題#e#
An important aspect of the ubiquitous era is the fusion of information technology and audio-visual technology. We believe that the unification of content, being character, image or voice data (in a mobile environment) is poised to become a key technology. Methods to integrate IT and AV will become necessary, in addition to the constant need for low power consumption, compactness, high-resolution, and high quality of displayed information. To meet these needs we have been developing an array of display technologies, under the umbrella of "System LCD". 
無處不在的時代的一個重要方面是信息技術和視聽技術的融合。我們相信，統一的內容，文字，圖像或語音數據（在移動環境中）有望成為一項關鍵技術。整合IT和AV的方法將成為必要，除了功耗低，體積小，高分辨率，高品質的顯示信息將不斷被需要。為了滿足這些需求，我們一直在開發一個數組傘下的“系統液晶”顯示技術。
2.  CG Silicon Technology  
CG硅技術
One of the key technologies for the realization of “System LCD” is high performance p-Si TFT [1-5]. We have developed novel crystallization technology, so-called “CG Silicon® technology”, for high performance TFT, in collaboration with Semiconductor Energy Laboratory Co. Ltd. By this technology, poly-silicon thin film is formed by solid phase crystallization (SPC) using an appropriate metal catalyst to expedite crystal formation.
實現“系統液晶”的關鍵技術之一是高性能p型Si TFT[1-5]。我們已經開發出新穎的結晶技術，所謂的“CG硅技術”，為高性能的TFT，通過該技術與半導體能源研究所有限公司合作，多晶硅薄膜是由固相晶化（SPC）使用適當的金屬催化劑，以加速晶體的形成。
Figure 1 shows TEM images of CG Silicon® and conventional poly-Silicon. In the CG Silicon® case, atomic arrangement at the grain boundaries of crystal domains is evident, whereas in conventional poly-Si continuity of the crystal structure at grain boundaries is lacking. As a result, the electron field-effect mobility can be as high as 300cm²/Vs for CG Silicon® TFT. Most importantly, however, CG Silicon® technology offers a substantially more stable process, which is an indispensable advantage for mass production.  
圖1顯示了CG硅和傳統多晶硅的TEM照片。在CG硅的情況下，液晶疇在晶界處的原子排列是顯而易見的，而在傳統的多晶Si在晶界處晶體結構的連續性不足。其結果是，在電子的場效應遷移率可高達2/ Vs的CG硅TFT300厘米。然而，最重要的是，CG硅技術提供了一種更加穩定的過程，這是大規模生產中不可缺少的優點。

Figure 1. Comparison between CG Silicon
圖1 CG硅之間的比較